Nanostructures, Oral Report

THE MATRIX FIELD-EMISSION STRUCTURES BASED ON CARBON NANOTUBES FOR FLAT-PANEL DISPLAYS

E.A. Tarasov, Saratov branch of IRE RAS, Saratov, Russia
G.V. Torgashov, Saratov branch of IRE RAS, Saratov, Russia
Y.A. Grigoriev, Saratov branch of IRE RAS, Saratov, Russia
N.I. Sinitsyn, Saratov branch of IRE RAS, Saratov, Russia
N. P. Aban'shin, SRI «Volga», Saratov, Russia
B. I. Gorfinkel', SRI «Volga», Saratov, Russia

ABSTRACT

The synthesis of carbon nanotubes (CNTs) in the holes was carried out by TCVD-method with using metal Fe-catalyst. The holes of depth of ~ 7 μm were obtained in the tripartite structure Si/SiO2/Cr by means of conventional photolithography. The matrix period is 25 μm, the area of each square «window» in the layer of Cr is 100 μm2. The field-emission current density of 26 µA/cm2 was registered at applied electric field of 4 – 5 V/µm. Such structures will be used to create matrix cathodes for field-emission displays.

Representing author

photo

Mr. Evgeny Aleksandrovich Tarasov

IRE RAS, post graduate student
Saratov, Russia

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